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| MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGF7176C 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7176C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.75~1.78GHz Low distortion : ACP=-46dBc max. @Po=28dBm,1.25MHz off-set. High efficiency : Id=560mA typ. @Po=28dBm Single voltage operation (NVG include) Enable to Gain control Surface mount package 3 Stage Amplifier with gain control External matching circuit is required GND OUT GND VSS VD_LEV VT GND IN APPLICATION 1.7GHz band handheld phone (7mmx6.1mmx1mm) pin pitch 1.0mm QUALITY GRADE GG Block Diagram of this IC and Application Circuit Example. Regulator Battery VDD2 VDD1 Negative voltage generator VT Pout VD3 Matching circuit GND VGC Matching circuit Pin *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. as of Feb.'98 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGF7176C 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C) Symbol VD1,VD2,VD3 VD_NVG VD_LEV,VT,VGC Pin Tc(op) Tstg Parameter Supply voltage of HPA Supply voltage of NVG Control voltage Input power Ratings 5 5 4.5 5 Unit V V V dBm deg.C deg.C Operating case temperature -30 ~ +85 Storage temperature -30 ~ +100 *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25 deg.C) Symbol f Idt Parameter frequency Total drain current Standard bias*,VGC=VT=3.0V, Pout=28dBm ACP<-46dBc (1.25MHz off-set.) Standard bias*,VT=3.0V,VGC=3.0V, Standard bias*,VT=3.0V,VGC=0.0V, Test conditions *Standard bias : VD1,VD2,VD3=3V VD_NVG,VD_LEV=3V MIN 1750 Limits TYP MAX Unit - 560 28 18 1780 MHz - - mA dB dB Ga Gain Standard bias*,VGC=3V,VT=3V, for Po>10dBm - - - - - - 170 50 28 5 - - - - -30 3 -46 -57 -70 mA dBm mA dBc Idle_Id Pout Ig 2sp rin ACP Psp Pnoise Idle current Standard bias*,VGC=3V,VT=2V, for Po<12dBm Output power Gate current 2nd harmonics input VSWR Adjacent channel leakage Standard bias*,VGC=VT=3V CDMA modulated signal based on IS-9 5 STD. (1.2288Mbps spreading,OQPSK) - - - - - - dBc dBm dBm Po=28dBm,1.2288MHz Spreading @1.25MHz offset Standard bias*,VGC=VT=3.0V Standard bias*,VGC=VT=3.0V, Resolution band width = 1MHz Standard bias*,VGC=VT=3.0V, Pin=0dBm, Load VSWR=10, All phase, Time=10 sec Standard bias*,VGC=VT=3.0V, Pin=0dBm, Load VSWR=3:1, All phase - - - Spurious level Noise power in 1.84~1.87GHz band Damage with-standing Note Stability - - No damage No oscillation Spurious level-60dBc Note *CDMA is code division multiple access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection as of Feb.'98 MITSUBISHI ELECTRIC |
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